Application to calculate the compositions and material properties of a III-V compound semiconductor.
Either InP or GaAs is assumed for the substrate.
Some of the compositions and material parameters of the AlGaInAsP compound semiconductor are specified to determine the remain unknown parameters.
The following properties are shown as a result: compositions (x, y, z), lattice constant, strain, bandgap, relative energy positions of the conduction and valence bands, and effective masses of the electron and holes.
Either InP or GaAs is assumed for the substrate.
Some of the compositions and material parameters of the AlGaInAsP compound semiconductor are specified to determine the remain unknown parameters.
The following properties are shown as a result: compositions (x, y, z), lattice constant, strain, bandgap, relative energy positions of the conduction and valence bands, and effective masses of the electron and holes.
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